Neighbor-cell assisted error correction for MLC NAND flash memories
نویسندگان
چکیده
منابع مشابه
Polar-Coded Forward Error Correction for MLC NAND Flash Memory Polar FEC for NAND Flash Memory
With the ever-growing storage density, high-speed, and low-cost data access, flash memory has inevitably become popular. Multi-level cell (MLC) NAND flash memory, which can well balance the data density and memory stability, has occupied the largest market share of flash memory. With the aggressive memory scaling, however, the reliability decays sharply owing to multiple interferences. Therefor...
متن کاملDesign of on-chip error correction systems for multilevel NOR and NAND flash memories
The design of on-chip error correction systems for multilevel code-storage NOR flash and data-storage NAND flash memories is concerned. The concept of trellis coded modulation (TCM) has been used to design on-chip error correction system for NOR flash. This is motivated by the non-trivial modulation process in multilevel memory storage and the effectiveness of TCM in integrating coding with mod...
متن کاملImproved NAND Flash Memories Storage Reliablity Using Nonlinear Multi Error Correction Codes
Multi-level cell (MLC) NAND flash memories are popular storage media because of their power efficiency and large storage density. Conventional reliable MLC NAND flash memories based on BCH codes or Reed-Solomon (RS) codes have a large number of undetectable and miscorrected errors. Moreover, standard decoders for BCH and RS codes cannot be easily modified to correct errors beyond their error co...
متن کاملReliability of 3D NAND Flash Memories
Reliability represents one of the major antagonist towards the unstoppable technological evolution of hyperscaled NAND memories, since the correct operations must be assured throughout the entire lifetime. In particular, the ability of keeping unaltered the stored information even after a consistent number of write operations and for long times must be guaranteed. A growth of the memory devices...
متن کاملPolitecnico Di Torino Porto Institutional Repository [article] Flares: an Aging Aware Algorithm to Autonomously Adapt the Error Correction Capability in Nand Flash Memories a Flares: an Aging Aware Algorithm to Autonomously Adapt the Error Correction Capability in Nand Flash Memories
Porto, the institutional repository of the Politecnico di Torino, is provided by the University Library and the IT-Services. The aim is to enable open access to all the world. Please share with us how this access benefits you. Your story matters. With the advent of solid-state storage systems, NAND flash memories are becoming a key storage technology. However, they suffer from serious reliabili...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: ACM SIGMETRICS Performance Evaluation Review
سال: 2014
ISSN: 0163-5999
DOI: 10.1145/2637364.2591994